Part Number Hot Search : 
DF06S 1510G LA1207 TD62786 73U3337K 0460005 43NFR10E ADC0804
Product Description
Full Text Search
 

To Download SSM3J01F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SSM3J01F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01F
High Speed Switching Applications
* * * Small package Low on resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating -30 10 -700 -1400 200 150 -55~150 Unit V V mA mW C C
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1F
Weight: 0.012 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27
SSM3J01F
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth iYfsi (Note) Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time RDS (ON ) Test Condition VGS = 10 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -0.35 A ID = -0.35 A, VGS = -4 V Min 3/4 -30 3/4 -0.6 1.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.3 0.4 240 24 94 36 37 Max 1 3/4 -1 -1.1 3/4 0.4 0.6 3/4 3/4 3/4 3/4 3/4 Unit mA V mA V S
(Note) ID = -0.35 A, VGS = -2.5 V Ciss Crss Coss ton toff VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.3 A, VGS = 0~-2.5 V, RG = 4.7 W
W pF pF pF ns
Note: Pulse test
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (ON)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product.
2
2003-03-27
SSM3J01F
3
2003-03-27
SSM3J01F
Figure 1
25.4 mm 25.4 mm 1.6 t (a Cu pad of 0.8 mm2 area)
4
2003-03-27
SSM3J01F
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
5
2003-03-27
This datasheet has been download from: www..com Datasheets for electronics components.


▲Up To Search▲   

 
Price & Availability of SSM3J01F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X